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| BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features http://onsemi.com * High DC Current Gain - * * * * hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 80 Vdc (Min) - BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors Pb-Free Packages are Available* DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS, 65 WATTS 4 MAXIMUM RATINGS Rating Symbol VCEO Value 80 100 80 100 5.0 8.0 12 0.2 Unit Vdc 1 TO-220AB CASE 221A STYLE 1 2 3 II I II III I I IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII II II II I II IIIIIIIIIIIIIIIIIII I II IIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII III I IIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II III I I I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII Collector-Emitter Voltage BDX53B, BDX54B BDX53C, BDX54C Collector-Base Voltage BDX53B, BDX54B BDX53C, BDX54C Emitter-Base Voltage Collector Current Base Current VCB Vdc VEB IC IB Vdc Adc Adc - Continuous - Peak Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 65 0.48 W W/C C TJ, Tstg -65 to +150 MARKING DIAGRAM & PIN ASSIGNMENT 4 Collector BDX5xyG AY WW 1 Base 3 Emitter 2 Collector THERMAL CHARACTERISTICS Characteristic Symbol RqJA Max 70 Unit Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case C/W C/W RqJC 1.92 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BDX5xy = Device Code x = 3 or 4 y = B or C A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 1 February, 2006 - Rev. 12 Publication Order Number: BDX53B/D II II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IC = 12 mA) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) DC Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0) BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Characteristic PD, POWER DISSIPATION (WATTS) 1.0 2.0 3.0 TA 4.0 20 40 60 TC 80 0 0 20 http://onsemi.com 40 Figure 1. Power Derating TA T, TEMPERATURE (C) 60 2 BDX53B, BDX54B BDX53C, BDX54C BDX53B, BDX54B BDX53C, BDX54C BDX53B, BDX54B BDX53C, BDX54C TC BDX53B, 53C BDX54B, 54C 80 100 120 VCEO(sus) Symbol VCE(sat) VBE(sat) ICBO ICEO Cob hFE hfe 140 160 Min 750 80 100 4.0 - - - - - - - - - Max 300 200 2.5 2.0 4.0 0.2 0.2 0.5 0.5 - - - - mAdc mAdc Unit Vdc Vdc Vdc pF - - BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA TUT RB V2 APPROX VCC - 30 V RC 5.0 3.0 2.0 SCOPE t, TIME ( s) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr tf ts + 8.0 V 0 V1 APPROX 51 D1 + 4.0 V [ 8.0 k [ 120 25 ms -12 V tr, tf v 10 ns DUTY CYCLE = 1.0% for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities td @ VBE(off) = 0 V 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 2. Switching Time Test Circuit Figure 3. Switching Times r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 t1 0.01 SINGLE PULSE t2 SINGLE PULSE P(pk) RqJC(t) = r(t) RqJC RqJC = 1.92C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 50 100 200 300 500 1000 0.1 0.07 0.05 0.03 0.02 0.01 0.01 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 Figure 4. Thermal Response 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 0.5 0.2 0.1 5.0 ms 1.0 ms 100 ms 500 ms dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BDX53B, BDX54B BDX53C, BDX54C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 0.05 0.02 1.0 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC -VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) t 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active-Region Safe Operating Area http://onsemi.com 3 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 10,000 hFE , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 300 TJ = + 25C 200 C, CAPACITANCE (pF) TJ = 25C VCE = 3.0 V IC = 3.0 A PNP NPN 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 100 70 50 PNP NPN 30 0.1 0.2 Cib Cob 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 6. Small-Signal Current Gain Figure 7. Capacitance NPN BDX53B, 53C 20,000 VCE = 4.0 V 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 -55 C 500 300 200 0.1 TJ = 150C 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 25C TJ = 150C 20,000 PNP BDX54B, 54C VCE = 4.0 V 25C -55 C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 1.8 1.8 1.4 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 9. Collector Saturation Region http://onsemi.com 4 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 3.0 TJ = 25C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.5 3.0 TJ = 25C 2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 1.5 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 1.0 0.5 0.1 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages NPN BDX53B, BDX53C V, TEMPERATURE COEFFICIENT (mV/C) +4.0 +3.0 +2.0 +1.0 0 -1.0 -2.0 -3.0 -4.0 -5.0 0.1 0.2 0.3 0.5 0.7 1.0 qVB for VBE *qVC for VCE(sat) 25C to 150C -55 to 150C 2.0 3.0 5.0 7.0 10 25C to 150C -55 C to 25C V, TEMPERATURE COEFFICIENT (mV/C) +5.0 *IC/IB v hFE/3 +5.0 +4.0 +3.0 +2.0 +1.0 0 -1.0 -2.0 -3.0 -4.0 -5.0 0.1 0.2 0.3 qVB for VBE PNP BDX54B, BDX54C *IC/IB v hFE/3 25C to 150C -55 C to 25C *qVC for VCE(sat) 25C to 150C -55 to 150C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 TJ = 150C 101 100 10- 1 100C 25C 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) REVERSE VCE = 30 V FORWARD 105 104 103 102 101 100 10- 1 +0.6 +0.4 TJ = 150C 100C 25C +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 REVERSE VCE = 30 V FORWARD -0.6 -0.4 -0.2 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region http://onsemi.com 5 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) NPN BDX53B BDX53C COLLECTOR PNP BDX54B BDX54C COLLECTOR BASE BASE [ 8.0 k [ 120 [ 8.0 k [ 120 EMITTER EMITTER Figure 13. Darlington Schematic ORDERING INFORMATION Device BDX53B BDX53BG BDX53C BDX53CG BDX54B BDX54BG BDX54C BDX54CG Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 BDX53B/D |
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